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 Surface Mount Switching Diode
CDST7000-G
Voltage: 100 Volts Current: 200 mA
Features
Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance
SOT-23
.119 (3.0) .110 (2.8) .020 (0.5)
Top View
.056 (1.40) .047 (1.20)
3
Mechanical data
.037(0.95) .037(0.95)
.006 (0.15)max.
.006 (0.15) .002 (0.05)
1 ANODE
3 CATHODE/ANODE
2 CATHODE
.020 (0.5)
.020 (0.5)
.103 (2.6) .086 (2.2)
Dimensions in inches (millimeters)
Maximum Ratings
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 100 200 500 Units VDC mAdc mAdc
Thermal Characteristics
Characteristic Total Device Dissipation FR- 5 Board(1) T A = 25C Derate above 25C Thermal Resistance, Junction t o Ambient Total Device Dissipation Alumina S ubstrate,(2) T A = 25C Derate above 25C Thermal Resistance, Junction t o Ambient Junction and Storage Temperature Symbol PD RJA PD RJA TJ, Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Units mW mW/C C/W mW mW/C C/W C
Electrical Characterics (TA = 25C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I (BR) = 100 uAdc ) Reverse Voltage Leakage Current V R = 50 Vdc VR = 100 Vdc VR = 50 Vdc, 125C Forward Voltage IF = 1.0 mAdc IF = 10 mAdc IF = 100 mAdc Reverse Recovery Time (I F = IR = 10 mAdc) (Figure 1) Diode Capacitance (V R = 0) 1.FR-5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina. Trr C VF Symbol V(BR) IR IR2 IR3 Min 100 0.55 0.67 0.75 Max 1 3 100 0.7 0.82 1.1 4.0 1.5 nS pF Vdc uAdc Units Vdc
MDS0301004A
.044 (1.10) .035 (0.90)
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 208 Approx. Weight: 0.008 gram
1
2
Page 1
Surface Mount Switching Diode
Rating and Characteristic Curves (CDST7000-G)
820 +10 V 2k 100 H 0.1 F DUT 50 utput Pulse Generator 50 Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
100 TA = 85C 10 10 TA = 150C
IR, Reverse Current(A) I F, Forward Current (mA)
TA = -40C
1.0
TA = 125C
VR
TA = 25C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0
10
20
30
40
50
VF, Forward Voltage(V)
VR, Reverse Voltage(V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD, Diode Capacitance(PF)
0.64
0.60
0.56
0.52 0 2.0 4.0 6.0 8.0
VR, Reverse Voltage(V)
Figure 4. Capacitance
MDS0301004A
Page 2


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